xinghe electronics LLDB3/lldc34/lldb4/lldb6 silicon bidirectional diac absolute ratings(limiting values) electrical characteristics power dissipation on printed circuit(l=10mm) breakover voltage (note 2 ) breakover voltage symmetry c=22nf(note 2) see diagram 1 c=22nf(note 2) see diagram 1 c=22nf(note 2) min min min typ 28 32 36 30 34 38 35 40 45 56 60 70 +4 +3 5 10 5 100 1.5 10 max max max max typ i=(i to if=10ma) see diagram 1 bo see diagram 2 see diagram 3 v =0.5 v max see diagram 1 bbo breakover current (note1) leakage current (note1) dynamic breakover voltage (note1) rise time (note1) output voltage (note 1 ) p c mw a t stg /t j t =50 c a tp=10 s f=100hz repetitive peak on-state current storage and operating junction temperature -40 to+125 c v v v v a s a i trm v bo +vbo - +v v o i bo i b tr 2.0 1.6 150 notes : 1.electrical characteristics applicable in both forward and reverse directions. 2.connected in parallel with the devices. mechanical data case weight : minimelf glass case(sod-80) : approx. 0.05 gram symbols parameters value LLDB3 lldc34 lldb4 lldb6 units value LLDB3 lldc34 lldb4 lldb6 units parameters symbols test condition -vbo features the three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. they demonstrate low breakover current at breakover voltage as they withstand peak pulse current. the breakover symmetry is within three volts(db3,dc34,db4) or four volts(db6). these diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control and heat control. jf's db3/dc34/db4/db6 are bi-directional triggered diode designed to operate in conjunction with triacs and scr's high temperature soldering guaranteed 260 10 seconds at terminals :/ minimelf dimensions in inches and (millimeters) 0.142(3.6) 0.126(3.2) 0.019(0.48) 0.011(0.28) 0.063(1.6) 0.055(1.4) e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1
2 diagram 1: current-voltage characteristics fig.1-power dissipation versus ambient temperature (maximum values) fig.3-peak pulse current versus pulse duration (maximum values) fig.2-relative variation of vbo versus junction temperature(typical values) diagram 2: test circuit for output voltage diagram 3: test circuit see diagram2 adjust r for i =0.5a p i p 90% 10% tr 10k 220v 50hz 500k d.u.t r=20 v o 0.1 f tamb( c) p (mw) v(t) v (t =25 c) bo j bo j 0 10 0.01 0.1 1 2 100 1000 10000 10 20 30 40 50 60 70 80 100 110 120 130 25 1.00 1.02 1.04 1.06 1.08 50 75 100 125 125 90 0 20 40 60 80 100 120 140 160 f=100hz t initial=25 c j i trm (a) tp( s) t j (c) 10ma i bo i b 0.5 v bo v bo v +i f -i f +v -v xinghe electronics LLDB3/lldc34/lldb4/lldb6 silicon bidirectional diac e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017
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